this is information on a product in full production. october 2014 docid027020 rev1 1/10 10 stps3170 power schottky rectifier datasheet ? production data features ? negligible switching losses ? high junction temperature capability ? very small conduction losses ? low leakage current ? avalanche rated ? ecopack ? compliant component ? t j = -40 c minimum operating description the stps3170 is a 170 v schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in smaflat and smbflat, this device is especially intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. also ideal for all led lighting applications where efficiency and space constraint are required. 6 0 $ i o d w . $ . $ 6 0 % i o d w . $ table 1. device summary symbol value i f(av) 3 a v rrm 170 v v f (typ) 0.63 v t j (max) 175 c www.st.com
characteristics stps3170 2/10 docid027020 rev1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.59 x i f(av) + 0.027 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 170 v v rrm repetitive peak reverse voltage, t j = -40 c 160 v i f(rms) forward rms current 15 a i f(av) average forward current, = 0.5, square wave smaflat, t l = 130 c 3a smbflat, t l = 140 c i fsm surge non repetitive forward current, t p = 10 ms sinusoidal smaflat 75 a smbflat 80 p arm (1) repetitive peak avalanche power, square wave t p = 10 s, t j = 125 c 210 w t stg storage temperature range -65 to +175 c t j operating junction temperature (2) -40 to +175 c 1. for pulse time duration deratings, please refer to figure 11 . more details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the stmicroelectronics application notes an1768, ?admissible avalanche power of schottky diodes? and an2025, ?converter improvement using schottky rectifier avalanche specification?. 2. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? () ------------------------- - < table 3. thermal parameters symbol parameter value unit r th(j-l) junction to lead, smaflat 20 c/w junction to lead, smbflat 15 table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 4.0 a t j = 125 c 0.73 4.0 ma v f (2) forward voltage drop t j = 25 c i f = 3 a 0.82 v t j = 125 c 0.63 0.67 t j = 25 c i f = 6 a 0.89 t j = 125 c 0.70 0.75 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid027020 rev1 3/10 stps3170 characteristics figure 1. average forward power dissipation versus average forward current figure 2. average forward current versus ambient temperature ( = 0.5) / / / / / 3 ) $ 9 : , ) $ 9 $ 7 / w s 7 w s 7 d p e ? & |